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    • 基于硅基的CVD石墨烯與CVD氮化硼異質結構(11cm,4片裝)
    • 基于硅基的CVD石墨烯與CVD氮化硼異質結構(11cm,4片裝)
    • 基于硅基的CVD石墨烯與CVD氮化硼異質結構(11cm,4片裝)
    基于硅基的CVD石墨烯與CVD氮化硼異質結構(11cm,4片裝)基于硅基的CVD石墨烯與CVD氮化硼異質結構(11cm,4片裝)基于硅基的CVD石墨烯與CVD氮化硼異質結構(11cm,4片裝)

    基于硅基的CVD石墨烯與CVD氮化硼異質結構(11cm,4片裝)

    CVD Graphene/CVD Hexagonal Boron Nitride heterostructure on SiO2/Si wafer

    Properties of Graphene/h-BN Film:

    Single Layer Graphene Film on Single Layer h-BN Film transferred onto 285 nm (p-doped) SiO2/Si wafer

    Size: 1cmx1cm; 4 pack

    The thickness and quality of each film is controlled by Raman Spectroscopy

    The coverage of this product is about 98%

    The films are continuous, with minor holes and organic residues

    High Crystalline Quality

    The graphene film is premodominantly single layer (more than 95%) with occasional small multilayer islands (less than 5% bi-layers)

    Sheet Resistance: 430-800 Ω/square

    Properties of Silicon/Silicon Dioxide Wafers:
    Oxide Thickness: 285 nm
    Oxide Thickness: 285 nm
    Color: Violet
    Wafer thickness: 525 micron
    Resistivity: 0.001-0.005 ohm-cm
    Type/Dopant: P/Boron
    Orientation: <100>
    Front Surface: Polished
    Back Surface: Etched


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